NDLI: Capacitance characterization in integrated circuit development: the intimate relationship of test structure design, equivalent circuit and measurement methodology

Content Provider	IEEE Xplore Digital Library
Author	Brown, G.A.
Copyright Year	2005
Description	Author affiliation: SEMATECH Inc., Austin, TX, USA (Brown, G.A.)
Abstract	This paper traces the historical and continuing relationship between integrated circuit device and material properties, capacitance test structure design, and measurement methodology. Design concepts for test structures useful for C-V characterization of EOT in ultra-thin leaky dielectrics are reviewed, and measurements on new and conventional devices are compared. The key premise is that test structure design should provide a structure with an equivalent circuit matching that used for measurement and data analysis.
Sponsorship	IEEE Electron Devices Soc
Starting Page	213
Ending Page	217
File Size	768542
Page Count	5
File Format	PDF
ISBN	0780388550
DOI	10.1109/ICMTS.2005.1452268
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-04-04
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Circuit testing Integrated circuit testing Equivalent circuits Capacitance measurement Integrated circuit measurements Dielectric measurements Design methodology Material properties Materials testing Capacitance-voltage characteristics
Content Type	Text
Resource Type	Article

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Capacitance characterization in integrated circuit development: the intimate relationship of test structure design, equivalent circuit and measurement methodology