NDLI: Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS

Content Provider	IEEE Xplore Digital Library
Author	Denais, M. Huard, V. Parthasarathy, C. Ribes, G. Perrier, F. Revil, N. Bravaix, A.
Copyright Year	2004
Description	Author affiliation: STMicroelectronics, Crolles, France (Denais, M.)
Abstract	We focus in this study on the negative bias temperature instability (NBTI)-induced /spl Delta/N/sub IT/ phenomenon and we point out its relative gate-oxide thickness (T/sub OX/) dependences. Studies are carried out in a large T/sub OX/ range, comparing the gate-oxide quality which was grown with or without nitrogen incorporation. We have developed an oxide field (F/sub OX/) dependence for /spl Delta/N/sub IT/ and we show the two opposite effects of T/sub OX/ on the threshold voltage shift (/spl Delta/V/sub T/). Simulation of both effects shows a good correlation with experimental results in pure oxide and confirms the reduced interface trapped charge effect in /spl Delta/V/sub T/ in nitrided devices. Results enable us to extrapolate the NBTI impact when T/sub OX/ is varied which allows us to determine in a useful way the security margin during the gate-oxide process optimization.
Starting Page	109
Ending Page	112
File Size	247854
Page Count	4
File Format	PDF
ISBN	0780385179
DOI	10.1109/IRWS.2004.1422750
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Negative bias temperature instability Niobium compounds Titanium compounds Stress measurement Time measurement Nitrogen Threshold voltage Tunneling Current measurement Charge measurement
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Mr. Siddhartha Mukherjee siddhartha@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	ndl-support@iitkgp.ac.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors

Towards Understanding Negative Bias Temperature Instability

The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability

Reassessing the Mechanisms of Negative-Bias Temperature Instability by Repetitive Stress/Relaxation Experiments

Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides

Mechanism of negative bias temperature instability for PMOSFET's with thin gate oxide

A new oxide trap-assisted NBTI degradation model

Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability

A new on-line method to evaluate the NBTI degradation of the ultrathin oxide

Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS

Similar Documents

Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors

Towards Understanding Negative Bias Temperature Instability

The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability

Reassessing the Mechanisms of Negative-Bias Temperature Instability by Repetitive Stress/Relaxation Experiments

Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides

Mechanism of negative bias temperature instability for PMOSFET's with thin gate oxide

A new oxide trap-assisted NBTI degradation model

Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability

A new on-line method to evaluate the NBTI degradation of the ultrathin oxide

Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS