NDLI: Real time plasma etch process modeling by neural networks

Content Provider	IEEE Xplore Digital Library
Author	Si, J. Yuan-Ling Tseng Clayton, M. Felker, S. Yoo, B. Martinez, J. Durham, J. Kim Dang
Copyright Year	1997
Description	Author affiliation: Motorola Inc., Mesa, AZ, USA (Si, J.)
Abstract	We address the problem of control relevant process modeling from production data for the N-well reactive ion etching processed by LAM Rainbow Etchers. Due to physical constraints we consider building an empirical neural network model using one lot of data which usually contains 24 wafers. Using the existence result of feedforward networks as universal approximators, we experimentally developed different network structures as models of the etching process under investigation. Our results are built upon extensive simulations on different lots of the process. The same modeling idea is also extended to use the network model to predict the end point detection signal prior for the processing of one wafer.
Starting Page	347
Ending Page	352
File Size	552793
Page Count	6
File Format	PDF
ISBN	0780341929
DOI	10.1109/ETFA.1997.616294
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-09-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma applications Etching Neural networks Semiconductor device modeling Predictive models Process control Production Buildings Signal processing Signal detection
Content Type	Text
Resource Type	Article

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Real time plasma etch process modeling by neural networks