NDLI: Characterization and modeling of the trench surface inversion problem for the trench isolated CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Cham, K.M. Shang-yi Chiang Wenocur, D. Rung, R.D.
Copyright Year	1983
Description	Author affiliation: Hewlett Packard Laboratories, Palo Alto, CA (Cham, K.M.)
Abstract	The trench surface inversion problem for the trench isolated CMOS technology was studied with special emphasis on the N-well CMOS technology where the problem is most severe. Using special trench surface inversion test structures, the charge density (Qss) at the trench surface has been determined to be about 2E11 $cm^{-2}.$ Latch-up characteristics of trench isolated structures are also characterized. Two dimensional simulations of the trench isolation structure show that Qssalong the trench surface has to be maintained at 5E10 $cm^{-2}if$ the substrate doping concentration remains at $6E14cm^{-3}.$ To prevent trench surface inversion, higher substrate doping, lower N-well bias and more negative substrate bias are recommended. Trench isolation is more suitable for P-well or N-well with p/p+ epi technologies.
Starting Page	23
Ending Page	26
File Size	356154
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1983.190431
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology Semiconductor device modeling Isolation technology Testing Current measurement Leakage current Doping Electrodes Laboratories Tellurium
Content Type	Text
Resource Type	Article

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