NDLI: Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's

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Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's

Content Provider	IEEE Xplore Digital Library
Author	Verzellesi, G. Pierobon, R. Rampazzo, F. Meneghesso, G. Chini, A. Mishra, U.K. Canali, C. Zanoni, E.
Copyright Year	2002
Description	Author affiliation: Dipt. di Ingegneria dell'Informazione, Universita di Modena e Reggio Emilia, Italy (Verzellesi, G.)
Abstract	Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Sponsorship	Electron. Devices Soc. IEEE
Starting Page	689
Ending Page	692
File Size	250987
Page Count	4
File Format	PDF
ISBN	0780374622
DOI	10.1109/IEDM.2002.1175932
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride HEMTs MODFETs Surface charging Pulse measurements Dispersion Current measurement Numerical simulation Polarization
Content Type	Text
Resource Type	Article

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