NDLI: Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Liu, C.H. Lee, M.T. Chih-Yung Lin Chen, J. Schruefer, K. Brighten, J. Rovedo, N. Hook, T.B. Khare, M.V. Shih-Fen Huang Wann, C. Tze-Chiang Chen Ning, T.H.
Copyright Year	2001
Description	Author affiliation: United Microelectron. Corp., Hopewell Junction, NY, USA (Liu, C.H.)
Abstract	This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The capability of our model has been demonstrated by excellent agreement between the fitted curves and experiments for ultrathin gate dielectrics (1.7 nm - 3.3 nm) fabricated by different processes. Among the various gate dielectrics under consideration, RPN (remote plasma nitrided oxide) is most resistant to NBTI stress.
Sponsorship	Electron Devices Soc. IEEE
File Size	324783
File Format	PDF
ISBN	0780370503
DOI	10.1109/IEDM.2001.979649
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Negative bias temperature instability Niobium compounds Titanium compounds MOSFETs Thermal stresses Dielectrics Threshold voltage Microelectronics Thermal degradation Stress measurement
Content Type	Text
Resource Type	Article

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics