NDLI: Single electron memory utilizing nano-crystalline Si over short-channel silicon-on-insulator transistors

Content Provider	IEEE Xplore Digital Library
Author	Hinds, B.J. Dutta, A. Yun, F. Yamanaka, T. Hatanani, S. Oda, S.
Copyright Year	2000
Description	Author affiliation: Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan (Hinds, B.J.)
Abstract	A promising approach for high density/low power consumption memory devices is to store a single charge in a nano-scale memory node, which affects electron transport in a nearby channel. Advantages of this design are room temperature operation and self limiting charge storage by Coulomb repulsion. Two notable approaches to this concept are nanocrystalline-Si (nc-Si) acting as a floating gate in a large area MOSFET (Tiwari et al., 1996) and a single polysilicon dot defined by e-beam lithography over a narrow SOI channel (Guo et al., 1997). A device which is sensitive to a single charge while using a method of nc-Si dot fabrication that is scalable to VLSI is required. Single electron memory devices based on two approaches of forming nc-Si with large area deposition processes are reported here. To make the active region of the device sensitive to a single charged dot, narrow channels (40 nm length by 30 nm width) are defined by e-beam lithography of thin (20 nm) SOI. The first approach for nc-Si synthesis is gas phase nucleation and growth by pulsed-source remote PECVD, which form 8/spl plusmn/1 nm diameter nc-Si dots (Ifuku et al., 1997). The second approach for scalable nc-Si formation is to deposit a thin film of SiO/sub x/ (x<2). Annealing of this film results in high density 3-8 nm nc-Si dots isolated from each other by a SiO/sub 2/ tunnel barrier (Hamasaki et al., 1978).
Starting Page	151
Ending Page	152
File Size	208438
Page Count	2
File Format	PDF
ISBN	0780364724
DOI	10.1109/DRC.2000.877127
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Single electron memory Lithography Energy consumption Nanoscale devices Temperature Nonvolatile memory MOSFET circuits Fabrication Very large scale integration Sputtering
Content Type	Text
Resource Type	Article

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