NDLI: Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions

Content Provider	IEEE Xplore Digital Library
Author	Zehetner, J. Vanko, G. Choleva, P. Dzuba, J. Ryger, I. Lalinsky, T.
Copyright Year	2014
Description	Author affiliation: Res. Centre for Microtechnol., Univ. of Appl. Sci., Dornbirn, Austria (Zehetner, J.) \|\| Inst. of Electr. Eng., Slovakia Univ. of Appl. Sci., Bratislava, Slovakia (Vanko, G.; Dzuba, J.; Ryger, I.; Lalinsky, T.)
Abstract	In order to improve the stability, sensitivity or efficiency of AlGaN/GaN based sensors employing high electron mobility transistors (HEMTs), Schottky diodes and/or resistors they should be integrated into micro-electro-mechanical-systems (MEMS). The creation of appropriate diaphragms and/or cantilevers is necessary for the verification of sensing properties of such MEMS sensors. In this paper, we present possible approaches to improve the fabrication of micromechanic structures in bulk SiC substrates with epitaxial AlGaN/GaN heterostructures using femtosecond laser ablation to fabricate SiC diaphragms. The objective of this work is also to point at the backside damaging effects and to find an optimal method for its elimination or suppression.
Starting Page	1
Ending Page	4
File Size	377392
Page Count	4
File Format	PDF
ISBN	9781479954742
e-ISBN	9781479954759
DOI	10.1109/ASDAM.2014.6998693
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-20
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Laser ablation Silicon carbide Sensors Gallium nitride Aluminum gallium nitride Substrates Micromechanical devices
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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