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Content Provider | IEEE Xplore Digital Library |
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Author | You Yin Tao Wang |
Copyright Year | 1963 |
Abstract | In this paper, we intensively investigated the proposed nanocontact phase-change memory (nano-C PCM) with incorporated nanostructures and high-resistivity nanolayer (nano-L) for reducing reset current. The high resistivity was able to be tuned by doping N into the conventional Ge2Sb2Te5 phase-change material. The analysis based on finite-element method exhibited that the current density in the nano-C PCM could be locally enhanced to about two times that of both conventional and nano-L PCM devices. This resulted in the localization of Joule heating in the nano-C PCM, making it have the highest temperature at the same programming current among the three types of PCM devices. Reset current of nano-C PCM could be greatly reduced to 8.2% of that of the conventional one, owing to its high-efficiency heating for amorphization. |
Sponsorship | IEEE Electron Devices Society |
Starting Page | 2184 |
Ending Page | 2189 |
Page Count | 6 |
File Size | 1600301 |
File Format | |
ISSN | 00189383 |
Volume Number | 62 |
Issue Number | 7 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-01-01 |
Publisher Place | U.S.A. |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Phase change materials Nanoscale devices Heating Conductivity Random access memory Nanostructures Current density phase-change memory (PCM). Low reset current nanostructure phase-change memory (PCM) |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials |
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