NDLI: Multiphysics Modeling of RF and Microwave High-Power Transistors

Content Provider	IEEE Xplore Digital Library
Author	Aaen, P.H. Wood, J. Bridges, D. Zhang, L. Johnson, E. Pla, J.A. Barbieri, T. Snowden, C.M. Everett, J.P. Kearney, M.J.
Copyright Year	1963
Abstract	In this paper, we present a multiphysics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide-semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bond-wire arrays connecting the die to the package leads. The effects of three different gate bond-pad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behavior of the large-die LDMOS power field-effect transistor.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	4013
Ending Page	4023
Page Count	11
File Size	2508346
File Format	PDF
ISSN	00189480
Volume Number	60
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Temperature measurement Logic gates Integrated circuit modeling Computational modeling Transmission line measurements Electromagnetics power field-effect transistor (FET) Electrothermal global modeling laterally diffused metal–oxide–semiconductor (LDMOS) transistor
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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Process-orientated physics-based modeling of microwave power transistors: Small- and large-signal characterization

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Analysis, Design, and Evaluation of LDMOS FETs for RF Power Applications up to 6 GHz

Distributed multiphysics modeling of microwave power transistors

Fast physical models for Si LDMOS power transistor characterization

Development of scalable electrical models for high-voltage LDMOS

Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact

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Capacitance Characteristics Improvement and Power Enhancement for RF LDMOS Transistors Using Annular Layout Structure

Multiphysics Modeling of RF and Microwave High-Power Transistors

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