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Author Snowden, C.M. ♦ Pantoja, R.R.
Sponsorship IEEE Microwave Theory and Techniques Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1963
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Gallium arsenide ♦ MESFETs ♦ Process design ♦ FETs ♦ Predictive models ♦ Microwave devices ♦ Electromagnetic heating ♦ Electron traps ♦ Power dissipation ♦ Geometry
Abstract A detailed physical model which is used to accurately predict the DC and microwave performance of GaAs MESFETs is described. This model, which accounts for hot electron effects in submicron FETs, includes trapping phenomena and heating due to power dissipation. It is used to determine the optimal design for small-signal and power devices, including single- and double-recessed FETs. The spread in device characteristics can be directly related to the variation in device geometry and process parameters experienced in fabrication. The accuracy and flexibility of this approach are demonstrated by comparison with measured data for a variety of devices.<<ETX>>
Description Author affiliation :: Dept. of Electron. & Electr. Eng., Leeds Univ., UK
ISSN 00189480
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1992-07-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 40
Issue Number 7
Size (in Bytes) 914.94 kB
Page Count 9
Starting Page 1401
Ending Page 1409

Source: IEEE Xplore Digital Library