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Author Kawano, M. ♦ Ikawa, M. ♦ Arima, K. ♦ Yamada, S. ♦ Kanashima, T. ♦ Hamaya, K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CRYSTAL GROWTH ♦ MAGNETIZATION ♦ MOLECULAR BEAM EPITAXY ♦ PERFORMANCE ♦ SEMICONDUCTOR MATERIALS ♦ SPIN ♦ SURFACTANTS ♦ TEMPERATURE RANGE 0400-1000 K ♦ VALVES
Abstract We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-01-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 4


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