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Author Peng, Jiebin ♦ Zhang, Gang ♦ Li, Baowen
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ELECTRODYNAMICS ♦ ELECTRONIC EQUIPMENT ♦ ENERGY LOSSES ♦ FILMS ♦ GRAPHENE ♦ MOBILITY ♦ MOLYBDENUM SULFIDES ♦ POWER DENSITY ♦ SILICON OXIDES ♦ SUBSTRATES ♦ THERMAL CONDUCTION ♦ THERMAL CONDUCTIVITY ♦ THERMAL DIFFUSIVITY ♦ THERMAL EFFLUENTS ♦ TRANSISTORS
Abstract Recently, wafer-scale growth of monolayer MoS{sub 2} films with spatial homogeneity is realized on SiO{sub 2} substrate. Together with the latest reported high mobility, MoS{sub 2} based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS{sub 2}, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS{sub 2} to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS{sub 2} and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS{sub 2} sheet. Therefore, an efficient thermal management strategy for MoS{sub 2} integrated device is proposed: Graphene sheet is brought into close proximity, 10–20 nm from MoS{sub 2} device; heat energy transfer from MoS{sub 2} to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-28
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 13


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