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Author Yamani, Z. ♦ Gurdal, O. ♦ Alaql, A. ♦ Nayfeh, M. H.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ POROUS MATERIALS ♦ MICROSTRUCTURE ♦ GRAIN SIZE ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ ELECTRON DIFFRACTION ♦ INELASTIC SCATTERING
Abstract We use high resolution cross sectional transmission electron microscopy to image the nanostructure of (100) {ital p}-type porous Si. A network of pore tracks subdivide the material into nano-islands and nanocrystallites are resolved throughout the material. With distance from the substrate, electron diffraction develops noncrystalline-like diffuse patterns that dominate the coherent scattering in the topmost luminescent layer. Also, with distance from the substrate, crystalline islands evolve such that their size drops to as small as 1 nm in the topmost luminescence material. Although the topmost luminescent layer is very rich in nanocrystallites, it has the strongest diffuse scattering of all regions. This confirms that diffuse scattering is due to size reduction effects rather than to an amorphous state. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 85
Issue Number 12


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