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Author Cortez, S. ♦ Krebs, O. ♦ Voisin, P. ♦ Gerard, J. M.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DIPOLES ♦ ELECTRONIC STRUCTURE ♦ GEOMETRY ♦ OSCILLATOR STRENGTHS ♦ PHOTOLUMINESCENCE ♦ POLARIZATION ♦ VALENCE
Abstract We present measurements of the optical dipole of interband transitions in InAs/GaAs quantum dots. Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical transitions have been determined, and the electronic structure is discussed, with a focus on the heavy-hole versus light-hole character of valence states.
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Physical Review B
Volume Number 63
Issue Number 23


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