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Author Emel'yanov, Vladimir I. ♦ Eremin, K. I. ♦ Starkov, V. V.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ DEFECTS ♦ DEFORMATION ♦ ETCHING ♦ EXPERIMENTAL DATA ♦ METALS ♦ NUCLEATION ♦ SEMICONDUCTOR MATERIALS ♦ SOLIDS ♦ VACANCIES ♦ CRYSTAL DEFECTS ♦ CRYSTAL STRUCTURE ♦ DATA ♦ ELEMENTS ♦ INFORMATION ♦ MATERIALS ♦ NUMERICAL DATA ♦ POINT DEFECTS ♦ SURFACE FINISHING
Abstract The defect-deformation (DD) mechanism of spontaneous formation of ensembles of seed pores during etching of semiconductors and metals is developed. The mechanism is based on the concept of generation and DD self-organisation of interstices and vacancies during etching. For p-Si, good agreement between theoretical and experimental results is obtained. In particular, a quasi-hexagonal order in the arrangement of micropores on the surface is revealed, which was predicted by the DD model, and a control of the properties of the ensemble by means of external forces is demonstrated. (letters)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2002-06-30
Publisher Place United States
Journal Quantum Electronics
Volume Number 32
Issue Number 6


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