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Author Chaudhari, P. ♦ Bhoraskar, S. V. ♦ Bhoraskar, V.N.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ PHYSICAL RADIATION EFFECTS ♦ COLOR CENTERS ♦ DOPED MATERIALS ♦ ELECTRONS ♦ HALL EFFECT ♦ MEV RANGE 01-10 ♦ MEV RANGE 10-100 ♦ N-TYPE CONDUCTORS ♦ NEUTRONS ♦ BARYONS ♦ CRYSTAL DEFECTS ♦ CRYSTAL STRUCTURE ♦ ELEMENTARY PARTICLES ♦ ELEMENTS ♦ ENERGY RANGE ♦ FERMIONS ♦ HADRONS ♦ LEPTONS ♦ MATERIALS ♦ MEV RANGE ♦ NUCLEONS ♦ POINT DEFECTS ♦ RADIATION EFFECTS ♦ SEMICONDUCTOR MATERIALS ♦ SEMIMETALS ♦ VACANCIES ♦ Materials- Radiation Effects
Abstract Defects produced in lightly doped crystalline silicon by 1-MeV electrons and 14-MeV neutrons are studied. Deep level transient spectroscopy (DLTS) and Hall voltage measurements have been used for investigating the energy depth, nature, and density of radiation-induced defects. The extent of damage caused by 14-MeV neutrons is found to be comparatively high as inferred from the continuous distribution of gap states in the DLTS measurement. Identical defects were observed in both cases where the {ital A}-center ({ital E}{sub {ital c}}{minus}0.17 eV), {ital E}-center ({ital E}{sub {ital c}}{minus}0.39 eV), and divacancy ({ital E}{sub {ital c}}{minus}0.23 eV) were prominent. An additional defect level ({ital E}{sub {ital c}}{minus}0.86 eV) was observed from DLTS for neutron-irradiated samples.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1991-08-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 70
Issue Number 3


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