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Author Yang, R. ♦ Huang, Q. S. ♦ Chen, X. L. ♦ Zhang, G. Y. ♦ Gao, H. -J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ADSORPTION ♦ CARRIER DENSITY ♦ CHARGE CARRIERS ♦ CHARGE EXCHANGE ♦ CRYSTAL STRUCTURE ♦ DOPED MATERIALS ♦ ELECTROCHEMISTRY ♦ EPITAXY ♦ GRAPHITE ♦ LAYERS ♦ RAMAN SPECTRA ♦ SEMICONDUCTOR MATERIALS ♦ SILICON CARBIDES ♦ SUBSTRATES ♦ CARBIDES ♦ CARBON ♦ CARBON COMPOUNDS ♦ CHEMISTRY ♦ CRYSTAL GROWTH METHODS ♦ ELEMENTS ♦ MATERIALS ♦ MINERALS ♦ NONMETALS ♦ SILICON COMPOUNDS ♦ SORPTION ♦ SPECTRA
Abstract In this paper, we reported a Raman scattering study of epitaxial graphene on different doped 6H-SiC (0001) substrates and investigated the substrate induced charge-transfer doping to the epitaxial graphene. We found that the charge carrier type and concentration of epitaxial graphene can be altered by SiC substrates with different doping level and doping type. This effect is comparable to that obtained by electrochemical doping. As Raman scattering is very sensitive to the doping level, the charge carrier concentration of epitaxial graphene can be estimated by the Raman G-peak shift. Our results are fundamental and may have implications for future epitaxial-graphene-based micro/nanoelectronic devices.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-02-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 107
Issue Number 3


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