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Author Sadeev, T. ♦ Arsenijević, D. ♦ Huang, H. ♦ Schires, K. ♦ Grillot, F. ♦ Bimberg, D.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIERS ♦ EFFICIENCY ♦ FEEDBACK ♦ FREQUENCY MIXING ♦ INDIUM ARSENIDES ♦ INDIUM PHOSPHIDES ♦ LASERS ♦ MODULATION ♦ QUANTUM DOTS ♦ SIGNAL-TO-NOISE RATIO ♦ VAPOR PHASE EPITAXY
Abstract This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ{sup (3)}/g{sub 0} of ∼4 × 10{sup −19} m{sup 3}/V{sup 3} are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ{sup (3)}/g{sub 0} compared to quantum dash lasers.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-11-09
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 19


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