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Author Hearne, S. ♦ Chason, E. ♦ Han, J. ♦ Floro, J. A. ♦ Figiel, J. ♦ Hunter, J. ♦ Amano, H. ♦ Tsong, I. S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM COMPOUNDS ♦ GALLIUM NITRIDES ♦ CHEMICAL VAPOR DEPOSITION ♦ STRESSES ♦ THIN FILMS ♦ SAPPHIRE ♦ ANNEALING ♦ X-RAY DIFFRACTION
Abstract The evolution of stress in gallium nitride films on sapphire has been measured in real time during metalorganic chemical vapor deposition. In spite of the 16{percent} compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050{degree}C. Furthermore, {ital in situ} stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-01-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 3


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