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Author Jiang, Jie ♦ Lu, Yinmei ♦ Meyer, Bruno K. ♦ Hofmann, Detlev M. ♦ Eickhoff, Martin
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ABSORPTION ♦ ABSORPTION SPECTRA ♦ ABUNDANCE ♦ AMMONIA ♦ CHEMICAL VAPOR DEPOSITION ♦ CONCENTRATION RATIO ♦ ELECTRICAL PROPERTIES ♦ ELECTRON-ELECTRON INTERACTIONS ♦ ELECTRONS ♦ EXTRAPOLATION ♦ FLOW RATE ♦ IMPURITIES ♦ NITROGEN ♦ THIN FILMS ♦ TIN OXIDES
Abstract The optical and electrical properties of n-type SnO{sub 2} films with high concentrations of nitrogen (SnO{sub 2}:N) grown by chemical vapor deposition are studied. The carrier concentration increases from 4.1 × 10{sup 18} to 3.9 × 10{sup 19 }cm{sup −3} and the absorption edge shifts from 4.26 to 4.08 eV with increasing NH{sub 3} flow rate. Typical Urbach tails were observed from the absorption spectra and the Urbach energy increases from 0.321 to 0.526 eV with increasing NH{sub 3} flow rate. An “effective” absorption edge of about 4.61 eV was obtained for all investigated samples from fitting the extrapolations of the Urbach tails. Burstein-Moss effect, electron-impurity, and electron-electron interactions are shown to play a minor role for the shift of the absorption edges in SnO{sub 2}:N thin films.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 24


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