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Author Yang, Haeyeon ♦ Ballet, P. ♦ Salamo, G. J.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ ARSENIC ♦ DIMERS ♦ MOLECULAR BEAM EPITAXY ♦ PHYSICS ♦ SCANNING TUNNELING MICROSCOPY
Abstract We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2{times}4 surface with a length of over 1 {mu}m and flat top 2{times}4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2{times}4 to 4{times}2 and the nanowires transform into dots with a rectangular base and flat top. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 12


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