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Author Cheng, Liwen ♦ Chen, Haitao ♦ Wu, Shudong
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIERS ♦ COMPUTERIZED SIMULATION ♦ CONFINEMENT ♦ DEPLETION LAYER ♦ ELECTRONS ♦ GALLIUM NITRIDES ♦ HOLES ♦ INDIUM NITRIDES ♦ LIGHT EMITTING DIODES ♦ P-TYPE CONDUCTORS ♦ QUANTUM WELLS
Abstract The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 8


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