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Author Glutsch, S. ♦ Chemla, D. S. ♦ Bechstedt, F.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ SUPERLATTICES ♦ OPTICAL PROPERTIES ♦ SEMICONDUCTOR MATERIALS ♦ ELECTRONIC STRUCTURE ♦ EXCITONS ♦ ABSORPTION SPECTRA ♦ CALCULATION METHODS ♦ NANOSTRUCTURES ♦ INTERFACE STATES
Abstract We describe a highly efficient, general-purpose, and easy-to-use method of calculating the optical absorption of semiconductor microstructures. The linear optical susceptibility is obtained by the numerical evaluation of the polarization in real space and real time, using finite differences and the leap-frog scheme. Numerical effort and storage scale as {ital O}({ital N}), where {ital N} is the number of base elements. The algorithm is suitable for large-scale quantum systems. For illustration, we apply this method to quantum wells in a perpendicular magnetic field, flat quantum dots, superlattices, coupled multiple quantum wells, and excitons on rough interfaces. {copyright} {ital 1996 The American Physical Society.}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-10-01
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 54
Issue Number 16
Organization Lawrence Berkeley National Laboratory


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