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Author Edwards, A. M. ♦ Dao, Y. ♦ Nemanich, R. J. ♦ Sayers, D. E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ TITANIUM ♦ INTERFACES ♦ SILICON ♦ THIN FILMS ♦ STRUCTURAL CHEMICAL ANALYSIS ♦ X-RAY SPECTROSCOPY ♦ REFRACTORY METAL COMPOUNDS ♦ MICROSTRUCTURE ♦ INTERFACE STRUCTURE ♦ EXAFS
Abstract A structural study of the initial interface region formed by titanium on silicon (111) was undertaken. Thin films (100 A) of titanium were deposited in ultrahigh vacuum (UHV) conditions onto atomically clean silicon(111) wafers and annealed {ital in} {ital situ} at 25{degree}C intervals between 300 and 475{degree}C. Structural characterization of the evolving interface was performed primarily via extended x-ray absorption fine structure (EXAFS) measurements. Results indicate that a major structural rearrangement takes place between 400 and 425{degree}C. EXAFS fitting analysis reveals this transition to be from a disordered TiSi-like phase to a more ordered C49-like disilicide state. The results are compared with those previously reported for the zirconium:silicon system. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-07-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 80
Issue Number 1


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