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Author Chen, Cheng ♦ Wang, Chao ♦ Diao, Dongfeng
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CARBON ♦ ELECTRONS ♦ ETCHING ♦ FABRICATION ♦ FILMS ♦ IRRADIATION ♦ NANOSTRUCTURES ♦ OXYGEN ♦ PRECURSOR ♦ SILICA ♦ SILICON OXIDES ♦ SUBSTRATES ♦ THICKNESS
Abstract We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to the fabrication of nanodevices and nanosurfaces.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 5


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