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Author Jeong, S. ♦ Bokor, J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ PHOTOEMISSION ♦ SURFACE PROPERTIES ♦ CRYSTAL DEFECTS ♦ ABSORPTION ♦ ELECTRON DENSITY ♦ CHARGE CARRIERS ♦ ELECTRIC CONDUCTIVITY
Abstract We present a time-resolved photoemission study of carrier dynamics near the Si(100)2{times}1 surface. It is found that the dominant contribution to the photoemission process originates from defect states on the Si(100)2{times}1 surface. Enhanced optical absorption is observed for these defect states and carrier exchange between these states and the bulk is observed. The electron density near the surface and the shape of the electron energy distribution are found to change on a very fast time scale. A simple theoretical model is established to extract transport parameters from the observed electron energy distribution. {copyright} {ital 1999} {ital The American Physical Society}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-02-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 59
Issue Number 7


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