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Author Shojiki, Kanako ♦ Iwabuchi, Takuya ♦ Kuboya, Shigeyuki ♦ Choi, Jung-Hun ♦ Tanikawa, Tomoyuki ♦ Hanada, Takashi ♦ Katayama, Ryuji ♦ Matsuoka, Takashi ♦ Usami, Noritaka
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ DIFFRACTION ♦ GALLIUM NITRIDES ♦ INCLUSIONS ♦ INDIUM COMPOUNDS ♦ LIGHT EMITTING DIODES ♦ QUANTUM WELLS ♦ VAPOR PHASE EPITAXY ♦ ZINC SULFIDES
Abstract The metastable zincblende (ZB) phase in N-polar (0001{sup ¯}) (−c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the −c-plane and Ga-polar (0001) (+c-plane), the −c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the −c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-06-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 106
Issue Number 22


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