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Author Fathany, Maulana Yusuf ♦ Fuada, Syifaul ♦ Lawu, Braham Lawas ♦ Sulthoni, Muhammad Amin
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CAPACITANCE ♦ COMPUTERIZED SIMULATION ♦ DESIGN ♦ ELECTRIC POTENTIAL ♦ ELECTRONS ♦ METALS ♦ QUANTUM DOTS ♦ S CODES ♦ TRANSISTORS
Abstract This research presents analysis of modeling on Parallel Triple Quantum Dots (TQD) by using SIMON (SIMulation Of Nano-structures). Single Electron Transistor (SET) is used as the basic concept of modeling. We design the structure of Parallel TQD by metal material with triangular geometry model, it is called by Triangular Triple Quantum Dots (TTQD). We simulate it with several scenarios using different parameters; such as different value of capacitance, various gate voltage, and different thermal condition.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-04-19
Publisher Place United States
Volume Number 1725
Issue Number 1


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