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Author Jansen, R. ♦ van {close_quote}t. Erve, O. M. J. ♦ Kim, S. D. ♦ Vlutters, R. ♦ Anil Kumar, P. S. ♦ Lodder, J. C.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BONDING ♦ FABRICATION ♦ PHYSICS ♦ SPIN ♦ THIN FILMS ♦ TRANSISTORS ♦ TRANSPORT
Abstract An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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