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Author Charache, G. W. ♦ DePoy, D. M. ♦ Baldasaro, P. F. ♦ Campbell, B. C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword SOLAR ENERGY ♦ THERMOPHOTOVOLTAIC CONVERTERS ♦ SPECTRAL REFLECTANCE ♦ REFLECTION ♦ ABSORPTION ♦ ELECTRIC CONDUCTIVITY ♦ GALLIUM ANTIMONIDES ♦ INDIUM ARSENIDES ♦ INDIUM PHOSPHIDES ♦ REFLECTIVITY ♦ CARRIER DENSITY ♦ TEMPERATURE DEPENDENCE
Abstract The back surface reflector (BSR) represents the spectral-control technology that offers the highest spectral utilization factor, {ital F}{sub {ital u}}, where {ital F}{sub {ital u}} is defined as the fraction of the total absorbed radiation with energy greater than the semiconductor bandgap. In order for this technology to succeed, an integrated photovoltaic cell{emdash}spectral control thermophotovoltaic device design is required which simultaneously minimizes free carrier absorption and series resistance losses. For this study, BSR technology was developed for GaSb, InAs, and InP substrate systems. Reflection and contact resistance results will be presented for the above material systems. To date, {ital F}{sub {ital u}}{approx_gt}80{percent} have been obtained for all three material systems, with potential for {ital F}{sub {ital u}}{approx_gt}90{percent}. {copyright} {ital 1996 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-02-01
Publisher Place United States
Volume Number 358
Issue Number 1
Technical Publication No. CONF-9507247-


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