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Author Niewelt, T. ♦ Mägdefessel, S. ♦ Schubert, M. C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ASYMMETRY ♦ CARRIER LIFETIME ♦ CHARGE CARRIERS ♦ DECAY ♦ DEFECTS ♦ DIAGRAMS ♦ ENERGY LEVELS ♦ HALL EFFECT ♦ ILLUMINANCE ♦ PHOTOLUMINESCENCE ♦ RECOMBINATION ♦ SILICON ♦ STATISTICS ♦ VALENCE
Abstract Light-induced degradation due to BO defects in silicon consists of a fast initial decay within a few seconds followed by a slower decay within hours to days. Determination of injection dependent charge carrier lifetime curves during the initial decay is challenging due to this short timeframe. We have developed a suitable measurement technique based on in situ photoluminescence measurements and present results of our studies of the fast degradation component. The temporal evolution of the recombination activity is studied and assessed by means of a two-level Shockley-Read-Hall statistics. A quadratic dependence of the fast defect activation on the hole concentration during illumination is demonstrated. We suggest a new parameterization of the recombination activity introduced by fast-formed BO defects featuring energy levels 0.34 eV below the conduction band and 0.31 eV above the valence band. The capture asymmetry ratio determined for the donor level of 18.1 is significantly smaller than previous parameterizations in literature suggest.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 120
Issue Number 8


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