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Author Jian, Jie ♦ Jacob, Clement ♦ Chen, Aiping ♦ Zhang, Wenrui ♦ Wang, Han ♦ Huang, Jijie ♦ Wang, Haiyan
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CRYSTAL LATTICES ♦ ENERGY BEAM DEPOSITION ♦ GRAIN BOUNDARIES ♦ GRAIN SIZE ♦ LASER RADIATION ♦ METALS ♦ PHASE TRANSFORMATIONS ♦ PULSED IRRADIATION ♦ SEMICONDUCTOR MATERIALS ♦ SUBSTRATES ♦ THIN FILMS ♦ TRANSITION AMPLITUDES ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ VANADIUM OXIDES
Abstract Vanadium dioxide (VO{sub 2}) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO{sub 2} thin films are characterized and correlated to the GB density. The VO{sub 2} films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO{sub 2} SMT amplitude and sharpness could be directly related to these defects at and near the boundaries.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-07
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 10


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