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Author Hsu, J. W. P. ♦ Manfra, M. J. ♦ Chu, S. N. G. ♦ Chen, C. H. ♦ Pfeiffer, L. N. ♦ Molnar, R. J.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DISLOCATIONS ♦ EPITAXY ♦ PHYSICS ♦ SCREW DISLOCATIONS ♦ STOICHIOMETRY ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ TRANSPORT
Abstract The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-18
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 25


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