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Author Bala, Manju ♦ Tripathi, T. S. ♦ Avasthi, D. K. ♦ Asokan, K. ♦ Gupta, Srashti
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ANNEALING ♦ COMPARATIVE EVALUATIONS ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ LEAD TELLURIDES ♦ PROBES ♦ SILVER ♦ THERMOELECTRIC PROPERTIES ♦ THIN FILMS ♦ X-RAY DIFFRACTION
Abstract The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-06-24
Publisher Place United States
Volume Number 1665
Issue Number 1


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