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Author Liu, Po-Tsun ♦ Chang, Chih-Hsiang ♦ Chang, Chih-Jui
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DEPOSITION ♦ EQUIPMENT ♦ ILLUMINANCE ♦ INSTABILITY ♦ LAYERS ♦ PASSIVATION ♦ PLASMA ♦ SILICON OXIDES ♦ STABILITY ♦ STRESSES ♦ THIN FILMS ♦ TRANSISTORS ♦ TUNGSTEN OXIDES
Abstract This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-27
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 26


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