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Author King, Sean W. ♦ Davis, Robert F. ♦ Nemanich, Robert J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALIGNMENT ♦ ALUMINIUM NITRIDES ♦ CHEMICAL BONDS ♦ CRYSTAL GROWTH ♦ EV RANGE ♦ GALLIUM NITRIDES ♦ GRAIN ORIENTATION ♦ INTERFACES ♦ MOLECULAR BEAM EPITAXY ♦ SEMICONDUCTOR DEVICES ♦ SILICON ♦ TEMPERATURE DEPENDENCE ♦ VALENCE ♦ X-RAY PHOTOELECTRON SPECTROSCOPY
Abstract To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600–1050 °C) and Al pre-exposures (1–15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be −3.5 ± 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 ± 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be −2.7 ± 0.3 and −0.4 ± 0.3 eV, respectively.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 4


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