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Author Veselov, D. A. ♦ Pikhtin, N. A. ♦ Lyutetskiy, A. V. ♦ Nikolaev, D. N. ♦ Slipchenko, S. O. ♦ Sokolova, Z. N. ♦ Shamakhov, V. V. ♦ Shashkin, I. S. ♦ Voronkova, N. V. ♦ Tarasov, I. S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ABSORPTION ♦ CARRIERS ♦ CONFINEMENT ♦ CURRENT DENSITY ♦ LAYERS ♦ PULSES ♦ PUMPING ♦ SEMICONDUCTOR LASERS ♦ WAVEGUIDES
Abstract A method of studying the absorption coefficient in layers of semiconductor lasers is proposed. Using lasers based on MOVPE-grown separate-confinement heterostructures with a broadened waveguide, the absorption coefficient is investigated under pulsed current pumping. It is found that when the pump current flows through the laser in question, an additional internal optical absorption arises in the heterostructure layers. It is shown that an increase in the pump current density up to 20 kA cm{sup -2} leads to an increase in absorption up to 2.5 cm{sup -1}. The feasibility of studying free-carrier absorption in the active region is demonstrated. (lasers)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-31
Publisher Place United States
Journal Quantum Electronics
Volume Number 45
Issue Number 7


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