Thumbnail
Access Restriction
Subscribed

Author Kim, Jeon Ho ♦ Lee, Won Jae ♦ Kim, Jin Dong ♦ Yoon, Soon Gil
Source SpringerLink
Content type Text
Publisher The Korean Institute of Metals and Materials
File Format PDF
Copyright Year ©2005
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword TiO$_{2}$ films ♦ PEALD ♦ tetrakis (dimethylamino) titanium ♦ permittivity ♦ leakage current density ♦ Metallic Materials ♦ Operating Procedures, Materials Treatment ♦ Magnetism, Magnetic Materials ♦ Engineering Thermodynamics, Heat and Mass Transfer ♦ Characterization and Evaluation of Materials ♦ Continuum Mechanics and Mechanics of Materials
Abstract TiO$_{2}$ dielectric films with 38 nm thickness were grown on Si (100) substrates at 200°C by plasma-enhancedatomic-layer deposition. Laser-irradiated TiO$_{2}$ films maintained an amorphous phase similar to as-grown films and showed an increase in permittivity and leakage current density with increasing laser powers and the number of laser shots at constant laser power. Laser-irradiation of TiO$_{2}$ films at room temperature produced oxygen vacancies at the film surface and new Ti$^{3−}$ valences. The electrons and space charges produced through the defect chemistry increased the leakage current density and permittivity in laser-irradiated TiO$_{2}$ films, respectively. The dielectric and electrical properties of the laser-irradiated TiO$_{2}$ films were completely recovered to correspond with those of as-grown films by post-annealing at 300°C for 5 min in O$_{2}$ ambient.
ISSN 15989623
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2005-01-01
Publisher Place Seoul
Journal Metals and Materials
Volume Number 11
Issue Number 4
Page Count 5
Starting Page 285
Ending Page 289


Open content in new tab

   Open content in new tab
Source: SpringerLink