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Author Pushpa, N. ♦ Gnana Prakash, A. P.
Source SpringerLink
Content type Text
Publisher Springer India
File Format PDF
Copyright Year ©2015
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics
Subject Keyword Interface trapped charge ♦ Oxide trapped charge ♦ Threshold voltage ♦ Transconductance ♦ Mobility degradation ♦ Physics ♦ Astrophysics and Astroparticles
Abstract N-channel depletion MOSFETs were irradiated with different swift heavy ions viz., 175 MeV Ni$^{13+}$ ions, 140 MeV Si$^{10+}$ ions, 100 MeV F$^{8+}$ ions, 95 MeV O$^{7+}$ ions and 48 MeV Li$^{3+}$ ions in the same dose range of 100 krad–100 Mrad. The different electrical characteristics of MOSFETs were studied before and after irradiation and after annealing. The degradation and recovery mechanisms were studied systematically. It was found that around 80 % degradation in transconductance and mobility and almost 100 % recoveries in the electrical characteristics of irradiated MOSFETs after annealing.
ISSN 09731458
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2015-04-28
Publisher Place New Delhi
e-ISSN 09749845
Journal Indian Journal of Physics
Volume Number 89
Issue Number 9
Page Count 8
Starting Page 943
Ending Page 950

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Source: SpringerLink