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Author Babu, J. Bubesh ♦ Yoh, Kanji
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ATOMIC FORCE MICROSCOPY ♦ CRYSTAL GROWTH ♦ CRYSTAL STRUCTURE ♦ DESORPTION ♦ INDIUM ARSENIDES ♦ LAYERS ♦ MOLECULAR BEAM EPITAXY ♦ MORPHOLOGY ♦ SEMICONDUCTOR MATERIALS ♦ SURFACES ♦ ARSENIC COMPOUNDS ♦ ARSENIDES ♦ CRYSTAL GROWTH METHODS ♦ EPITAXY ♦ INDIUM COMPOUNDS ♦ MATERIALS ♦ MICROSCOPY ♦ PNICTIDES ♦ SORPTION
Abstract Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 {mu}m{sup 2}. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-08-16
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 7


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