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Author Rizwana Begum, K. ♦ Sankeshwar, N. S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BOLTZMANN EQUATION ♦ DIFFUSION ♦ DRAG ♦ ELECTRONS ♦ GRAPHENE ♦ ITERATIVE METHODS ♦ PHONONS ♦ ROUGHNESS ♦ SILICA ♦ SILICON OXIDES ♦ SUBSTRATES ♦ SURFACES ♦ TEMPERATURE DEPENDENCE ♦ THERMOELECTRIC MATERIALS ♦ THERMOELECTRICITY
Abstract Thermoelectric power, S, of graphene supported on SiO{sub 2} substrate is studied for 10K < T < 400K within the framework of Boltzmann transport formalism by an iterative method. Numerical calculations of diffusion thermopower, S{sub d}, as a function of temperature, are presented assuming the electrons to be scattered by impurities, vacancies, surface roughness, acoustic phonons, inelastic optical phonons and surface polar optical phonons. For the range of temperatures considered, S{sub d} is found to be dominated by impurities for T < 40K and by acoustic phonon and vacancy scatterings for T > 40K. The optical phonons are found to influence S{sub d} for T > 300K. Our calculations, assuming the drag component to be negligible, obtain good agreement with the recent experimental data.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-06-24
Publisher Place United States
Volume Number 1665
Issue Number 1


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