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Author Tsuchiya, Takashi ♦ Moriyama, Satoshi ♦ Terabe, Kazuya ♦ Aono, Masakazu
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM OXIDES ♦ CRITICAL TEMPERATURE ♦ DENSITY OF STATES ♦ ELECTRIC POTENTIAL ♦ ELECTRONIC EQUIPMENT ♦ EPITAXY ♦ FERMI LEVEL ♦ FILMS ♦ INTERFACES ♦ LATTICE PARAMETERS ♦ LIQUIDS ♦ LITHIUM SILICATES ♦ MODULATION ♦ MONOCRYSTALS ♦ NIOBIUM ♦ SOLID ELECTROLYTES ♦ SOLIDS ♦ SUPERCONDUCTING DEVICES ♦ TRANSISTORS
Abstract An all-solid-state electric-double-layer transistor (EDLT) was fabricated for electrical modulation of the superconducting critical temperature (T{sub c}) of Nb film epitaxially grown on α-Al{sub 2}O{sub 3} (0001) single crystal. In an experiment, T{sub c} was modulated from 8.33 to 8.39 K while the gate voltage (V{sub G}) was varied from 2.5 to −2.5 V. The specific difference of T{sub c} for the applied V{sub G} was 12 mK/V, which is larger than that of an EDLT composed of ionic liquid. A T{sub c} enhancement of 300 mK was found at the Li{sub 4}SiO{sub 4}/Nb film interface and is attributed to an increase in density of states near the Fermi level due to lattice constant modulation. This solid electrolyte gating method should enable development of practical superconducting devices highly compatible with other electronic devices.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-06
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 1


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