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Author Radtke, C. ♦ Baumvol, I. J. R. ♦ Morais, J. ♦ Stedile, F. C.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ MIXTURES ♦ OXIDATION ♦ OXIDES ♦ OXYCARBIDES ♦ PHYSICS ♦ SCATTERING ♦ SILICON ♦ SILICON CARBIDES ♦ THIN FILMS
Abstract Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiC{sub x}O{sub y}), while, for longer oxidation times, a mixture of SiC{sub x}O{sub y} and SiO{sub 2} is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-04
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 23


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