Thumbnail
Access Restriction
Open

Author Price, Michelle J. ♦ Foley, Justin M. ♦ May, Robert A. ♦ Maldonado, Stephen
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ MATERIALS SCIENCE ♦ CHARGE CARRIERS ♦ CHARGE EXCHANGE ♦ COMPARATIVE EVALUATIONS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRIC POTENTIAL ♦ GOLD ♦ HETEROJUNCTIONS ♦ ORGANIC POLYMERS ♦ PHOTOVOLTAIC EFFECT ♦ SEMICONDUCTOR MATERIALS ♦ SILICON ♦ STEADY-STATE CONDITIONS ♦ ELECTRICAL PROPERTIES ♦ ELEMENTS ♦ EVALUATION ♦ MATERIALS ♦ METALS ♦ ORGANIC COMPOUNDS ♦ PHOTOELECTRIC EFFECT ♦ PHYSICAL PROPERTIES ♦ POLYMERS ♦ SEMICONDUCTOR JUNCTIONS ♦ SEMIMETALS ♦ TRANSITION ELEMENTS
Abstract Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, v{sub n}, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-08-23
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 8


Open content in new tab

   Open content in new tab