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Author Koblmueller, G. ♦ Chu, R. M. ♦ Raman, A. ♦ Mishra, U. K. ♦ Speck, J. S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM COMPOUNDS ♦ CARBON ♦ CRYSTAL STRUCTURE ♦ DEPOSITION ♦ DISSOCIATION ♦ DOPED MATERIALS ♦ ELECTRON GAS ♦ ELECTRON MOBILITY ♦ GALLIUM NITRIDES ♦ INTERFACES ♦ LAYERS ♦ MOLECULAR BEAM EPITAXY ♦ MORPHOLOGY ♦ PLASMA ♦ SEMICONDUCTOR MATERIALS ♦ SUBSTRATES ♦ SURFACES ♦ THIN FILMS ♦ CRYSTAL GROWTH METHODS ♦ ELEMENTS ♦ EPITAXY ♦ FILMS ♦ GALLIUM COMPOUNDS ♦ MATERIALS ♦ MOBILITY ♦ NITRIDES ♦ NITROGEN COMPOUNDS ♦ NONMETALS ♦ PARTICLE MOBILITY ♦ PNICTIDES
Abstract We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-02-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 107
Issue Number 4


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