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Author Laaziri, K. ♦ Roorda, S. ♦ Chicoine, M. ♦ Kycia, S. ♦ Robertson, J. L. ♦ Wang, J. ♦ Moss, S. C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ STRUCTURE FUNCTIONS ♦ SILICON ♦ AMORPHOUS STATE ♦ STRUCTURE FACTORS ♦ ION IMPLANTATION ♦ COORDINATION NUMBER ♦ DISTRIBUTION FUNCTIONS ♦ POINT DEFECTS ♦ ANNEALING ♦ X-RAY DIFFRACTION ♦ SYNCHROTRON RADIATION
Abstract The structure factor S(Q) of high purity amorphous Si membranes prepared by ion implantation was measured over an extended Q range (0.03{endash}55 {Angstrom} {sup {minus}1} ). Calculation of the first neighbor shell coordination (C{sub 1} ) as a function of maximum Q indicates that measurement of S(Q) out to at least 40 {Angstrom}{sup {minus}1} is required to reliably determine the radial distribution function (RDF). A 2{percent} change in C{sub 1} and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing at 600thinsp{degree}C, C{sub 1}=3.88 , which would explain why amorphous Si is less dense than crystalline Si. {copyright} {ital 1999} {ital The American Physical Society}
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-04-01
Publisher Department Oak Ridge National Laboratory
Publisher Place United States
Journal Physical Review Letters
Volume Number 82
Issue Number 17
Organization Oak Ridge National Laboratory


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