Thumbnail
Access Restriction
Open

Author Albrecht, J. D. ♦ Cong, L. ♦ Ruden, P. P. ♦ Nathan, M. I. ♦ Smith, D. L.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword ENGINEERING NOT INCLUDED IN OTHER CATEGORIES ♦ SEMICONDUCTOR DEVICES ♦ TUNNEL EFFECT ♦ STRESSES ♦ RESONANCE ♦ ELECTRIC CURRENTS ♦ PRESSURE DEPENDENCE ♦ PIEZOELECTRICITY ♦ HETEROJUNCTIONS ♦ IV CHARACTERISTIC ♦ III-V SEMICONDUCTORS ♦ HETEROSTRUCTURES
Abstract Calculations of the effects of external stress on the current{endash}voltage characteristics of double-barrier (001)- and (111)-oriented resonant tunneling devices are presented. Crystal strains arising from the application of external pressure and, in pseudomorphic structures, lattice mismatch cause shifts in the conduction and valence bands of the well and barrier layers with respect to the unstrained alignment. For certain stress orientations piezoelectric effects give rise to internal electric fields parallel to the current direction. The combined piezoelectric and band-structure effects modulate the transmission resonances which control the shape of the current versus voltage characteristics of the structures. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-05-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 79
Issue Number 10


Open content in new tab

   Open content in new tab