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Author Artola, L. ♦ Hubert, G. ♦ Duzellier, S. ♦ Bezerra, F.
Sponsorship IEEE Nuclear and Plasma Sciences Society ♦ Computer Applications in Nuclear and Plasma Sciences (CANPS) ♦ Lawrence Berkeley Lab. ♦ Lawrence Livermore Nat. Lab. ♦ APS ♦ College of William and Mary ♦ Continuous Electron Beam Accelerator Facility ♦ NASA ♦ Defence Nuclear Agency ♦ Sandia National Laboratories ♦ Jet Propulsion Laboratory ♦ Brookhaven Nat. Lab. ♦ Lawrence Livermore Nat. Lab ♦ IEEE/NPPS Radiat. Effects Committee ♦ Defence Nuclear Agency/DoD ♦ Sandia National Laboratories/DOE ♦ Jet Propulsion Laboratory/NASA ♦ Phillips Lab./DoD
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1963
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Modern physics ♦ Technology ♦ Medicine & health ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Transient analysis ♦ Analytical models ♦ Semiconductor device modeling ♦ Doping profiles ♦ Discrete event simulation ♦ Space technology ♦ Predictive models ♦ Substrates ♦ Aerospace electronics ♦ Neutrons ♦ TCAD simulation ♦ Charge collection ♦ diffusion analytical model ♦ heavy ion ♦ single event effect
Abstract TCAD simulations of a 90 nm CMOS bulk technology have been performed to investigate how technologies parameters impact on the collection charge leading to Single Event Effects. This work proposes an improved diffusion collection model.
Description Author affiliation :: ONERA, Toulouse, France
Author affiliation :: CNES, Toulouse, France
ISSN 00189499
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2010-08-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 57
Issue Number 4
Size (in Bytes) 1.00 MB
Page Count 7
Starting Page 1869
Ending Page 1875


Source: IEEE Xplore Digital Library