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Author Xu, J. ♦ Roth, E. G. ♦ Holland, O. W. ♦ Mills, A. P. (Jr.) ♦ Suzuki, R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ PHYSICS ♦ ANNEALING ♦ SILICON ♦ ION IMPLANTATION ♦ EPITAXY ♦ VACANCIES ♦ CRYSTAL DOPING ♦ INTERSTITIALS ♦ CRYSTAL DEFECTS ♦ POSITRONS ♦ DIFFUSION
Abstract A method for preparing shallow dopant distributions via solid-phase epitaxial growth (SPEG) following amorphization by low-energy Si self-ion implantation leaves defects that can lead to unwanted dopant impurity diffusion. The double implant method for SPEG [O. W. Holland {ital et al.}, J. Electron. Mater. {bold 25}, 99 (1996)] uses both low- and high-energy Si self-ion implantation to remove most of the interstitials. Nevertheless, we find that measurable crystalline imperfections remain following the SPEG annealing step. Measurements of defect profiles using variable-energy positron spectroscopy show that there are divacancy-impurity complexes in the SPEG layer and V{sub 6} and larger vacancy clusters near the SPEG-crystalline interface. These measurements should be useful for modeling the diffusion of dopant atoms and for fine tuning the double implant parameters. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-02-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 7


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